Yellow luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescence

Yellow luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescence

Materials Research Society Symposium - Proceedings

Saved in:

Bibliographic Details
Main Authors:	Teo, E.J., Bettiol, A.A., Osipowicz, T., Hao, M.S., Chua, S.J., Liu, Y.Y.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/72220
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Depth-resolved luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescence
by: Teo, E.J., et al.
Published: (2014)

Channeling contrast microscopy on lateral epitaxial overgrown GaN
by: Teo, E.J., et al.
Published: (2014)

Micro-Raman scattering in laterally epitaxial overgrown GaN
by: Tripathy, S., et al.
Published: (2014)

Morphology controllable ZnO growth on facet-controlled epitaxial lateral overgrown GaN/sapphire templates
by: Zhou, H.L., et al.
Published: (2014)

Spatially resolved photoluminescence of laterally overgrown GaN
by: Gibart, P., et al.
Published: (2014)

Selective excitation of the yellow luminescence of GaN
by: Colton, J.S., et al.
Published: (2014)

Assignment of deep levels causing yellow luminescence in GaN
by: Soh, C.B., et al.
Published: (2014)

Selective excitation and thermal quenching of the yellow luminescence of GaN
by: Colton, J.S., et al.
Published: (2014)

Selective excitation and thermal quenching of the yellow luminescence of GaN
by: Colton, J.S., et al.
Published: (2014)

Channeling contrast microscopy of epitaxial lateral overgrowth of ZnO/GaN films
by: Zhou, H., et al.
Published: (2014)

Visible-Blind Metal-Semiconductor-Metal Ultra-Violet Detectors Based on Epitaxially Laterally Overgrown Gallium Nitride
by: Gu, W., et al.
Published: (2014)

Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth
by: Zang, K.Y., et al.
Published: (2014)

Ionoluminescence and ion beam induced secondary electron imaging of cubic boron nitride
by: Teo, E.J., et al.
Published: (2014)

Hyper-spectral ionoluminescence system for minerals and fluid inclusions
by: Laird, J.S., et al.
Published: (2014)

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template
by: Wang, Y.D., et al.
Published: (2014)

Luminescence and vibrational properties of erbium-implanted nanoporous GaN
by: Soh, C.B., et al.
Published: (2014)

Nanopatterning and selective area epitaxy of GaN on Si substrate
by: Wang, L.S., et al.
Published: (2014)

Proton beam micromachining dose normalization for SU-8 using ionoluminescence detection
by: Udalagama, C.N.B., et al.
Published: (2014)

2 MeV proton channeling contrast microscopy of LEO GaN thin film structures
by: Osipowicz, T., et al.
Published: (2014)

Infrared reflectance studies of GaN epitaxial films on sapphire substrate
by: Feng, Z.C., et al.
Published: (2014)

Spectral features of LO phonon sidebands in luminescence of free excitons in GaN
by: Xu, S.J., et al.
Published: (2014)

Effect of temperature on longitudinal optical phonon-assisted exciton luminescence in heteroepitaxial GaN layer
by: Xu, S.J., et al.
Published: (2014)

Enhanced luminescence efficiency due to carrier localization in InGaNGaN heterostructures grown on nanoporous GaN templates
by: Soh, C.B., et al.
Published: (2011)

Imaging Ni segregation in synthetic diamond using ionoluminescence (IL) and particle induced X-ray emission (PIXE)
by: Bettiol, A.A., et al.
Published: (2014)

Surface analysis of GaN decomposition
by: Choi, H.W., et al.
Published: (2014)

Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers
by: Xu, S.J., et al.
Published: (2014)

Suppression of Thermal Convection and Its Effect on Growth of GaN in Metal Organic Vapor Phase Epitaxy
by: Li, G., et al.
Published: (2014)

Systematic studies of the epitaxial growth of single-crystal ZnO nanorods on GaN using hydrothermal synthesis
by: Le, H.Q., et al.
Published: (2014)

Channeling contrast microscopy of GaN and InGaN thin films
by: Osipowicz, T., et al.
Published: (2014)

Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon
by: Park, S.-J., et al.
Published: (2014)

Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates
by: Feng, Z.C., et al.
Published: (2014)

Rutherford backscattering analysis of GaN decomposition
by: Choi, H.W., et al.
Published: (2014)

Phosphor-free apple-white LEDs with embedded indium-rich nanostructures grown on strain relaxed nano-epitaxy GaN
by: Soh, C.B., et al.
Published: (2014)

Threading dislocations annihilation in regrown GaN film on nanoporous GaN template
by: Soh, C.B., et al.
Published: (2014)

High quality GaN grown from a nanoporous GaN template
by: Hartono, H., et al.
Published: (2014)

Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth
by: Soh, C.B., et al.
Published: (2016)

Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template
by: Hartono, H., et al.
Published: (2014)

Fabrication and characterization of nano-porous GaN template for strain relaxed GaN growth
by: Hartono, H., et al.
Published: (2014)

Epitaxial growth of Sc2 O3 films on GaN (0001) by pulsed laser deposition
by: Liu, C., et al.
Published: (2014)

Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy
by: Liu, H.F., et al.
Published: (2014)