Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructures
International Symposium on IC Technology, Systems and Applications
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sg-nus-scholar.10635-725542015-01-15T13:28:44Z Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructures Du, A.Y. Li, M.F. Chong, T.C. Teo, K.L. Lau, W.S. ELECTRICAL ENGINEERING International Symposium on IC Technology, Systems and Applications 7 239-242 2014-06-19T05:09:21Z 2014-06-19T05:09:21Z 1997 Conference Paper Du, A.Y.,Li, M.F.,Chong, T.C.,Teo, K.L.,Lau, W.S. (1997). Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructures. International Symposium on IC Technology, Systems and Applications 7 : 239-242. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/72554 NOT_IN_WOS Scopus |
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International Symposium on IC Technology, Systems and Applications |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Du, A.Y. Li, M.F. Chong, T.C. Teo, K.L. Lau, W.S. |
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Conference or Workshop Item |
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Du, A.Y. Li, M.F. Chong, T.C. Teo, K.L. Lau, W.S. |
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Du, A.Y. Li, M.F. Chong, T.C. Teo, K.L. Lau, W.S. Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructures |
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Du, A.Y. |
title |
Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructures |
title_short |
Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructures |
title_full |
Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructures |
title_fullStr |
Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructures |
title_full_unstemmed |
Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructures |
title_sort |
deep level states caused by dislocations in mbe grown p-ingaas/gaas heterostructures |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/72554 |
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