Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructures

Deep level states caused by dislocations in MBE grown p-InGaAs/GaAs heterostructures

International Symposium on IC Technology, Systems and Applications

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Bibliographic Details
Main Authors: Du, A.Y., Li, M.F., Chong, T.C., Teo, K.L., Lau, W.S.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72554
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Institution: National University of Singapore
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Summary:International Symposium on IC Technology, Systems and Applications

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