Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

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Bibliographic Details
Main Authors: Goh, Y.H., Ling, C.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72676
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Institution: National University of Singapore
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Summary:IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE