High spatial resolution mapping of strain induced by the geometry configuration in nanoscaled devices

High spatial resolution mapping of strain induced by the geometry configuration in nanoscaled devices

Proceedings - Electrochemical Society

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Bibliographic Details
Main Authors: Toh, S.L., Loh, K.P., See, K.S., Boothroyd, C.B., Li, K., Lau, W.S., Ang, C.H., Chan, L.
Other Authors: CHEMISTRY
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/77449
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Institution: National University of Singapore
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Summary:Proceedings - Electrochemical Society

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