High spatial resolution mapping of strain induced by the geometry configuration in nanoscaled devices
Proceedings - Electrochemical Society
Saved in:
Main Authors: | Toh, S.L., Loh, K.P., See, K.S., Boothroyd, C.B., Li, K., Lau, W.S., Ang, C.H., Chan, L. |
---|---|
Other Authors: | CHEMISTRY |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/77449 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED
by: Toh, S.L., et al.
Published: (2014) -
Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction
by: Toh, S.L., et al.
Published: (2014) -
Nanoscaled metal coatings and dispersions prepared using viologen systems
by: Zhao, L., et al.
Published: (2014) -
Nanoscaling of phase change memory cells for high speed memory applications
by: Wang, W., et al.
Published: (2014) -
Nanoscaled electrical homogeneity of indium zinc oxide films
by: Kumar, B., et al.
Published: (2014)