Study On IN0.53GA0.47AS MOS Devices with Plasma-Ph3/N2 Treatment and Device Structure Optimization

Ph.D

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Bibliographic Details
Main Author:	SUMARLINA AZZAH BTE SULEIMAN
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2014
Subjects:	In0.53Ga0.47As, HfAlO, Plasma-PH3/N2, Mobility Scattering, TCAD, sub-22nm
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/77712
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-77712
record_format	dspace
spelling	sg-nus-scholar.10635-777122015-01-06T06:56:48Z Study On IN0.53GA0.47AS MOS Devices with Plasma-Ph3/N2 Treatment and Device Structure Optimization SUMARLINA AZZAH BTE SULEIMAN ELECTRICAL & COMPUTER ENGINEERING SAMUDRA, GANESH S LEE SUNGJOO LEE SUNGJOO In0.53Ga0.47As, HfAlO, Plasma-PH3/N2, Mobility Scattering, TCAD, sub-22nm Ph.D DOCTOR OF PHILOSOPHY 2014-06-30T18:00:38Z 2014-06-30T18:00:38Z 2013-08-05 Thesis SUMARLINA AZZAH BTE SULEIMAN (2013-08-05). Study On IN0.53GA0.47AS MOS Devices with Plasma-Ph3/N2 Treatment and Device Structure Optimization. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/77712 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
language	English
topic	In0.53Ga0.47As, HfAlO, Plasma-PH3/N2, Mobility Scattering, TCAD, sub-22nm
spellingShingle	In0.53Ga0.47As, HfAlO, Plasma-PH3/N2, Mobility Scattering, TCAD, sub-22nm SUMARLINA AZZAH BTE SULEIMAN Study On IN0.53GA0.47AS MOS Devices with Plasma-Ph3/N2 Treatment and Device Structure Optimization
description	Ph.D
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING SUMARLINA AZZAH BTE SULEIMAN
format	Theses and Dissertations
author	SUMARLINA AZZAH BTE SULEIMAN
author_sort	SUMARLINA AZZAH BTE SULEIMAN
title	Study On IN0.53GA0.47AS MOS Devices with Plasma-Ph3/N2 Treatment and Device Structure Optimization
title_short	Study On IN0.53GA0.47AS MOS Devices with Plasma-Ph3/N2 Treatment and Device Structure Optimization
title_full	Study On IN0.53GA0.47AS MOS Devices with Plasma-Ph3/N2 Treatment and Device Structure Optimization
title_fullStr	Study On IN0.53GA0.47AS MOS Devices with Plasma-Ph3/N2 Treatment and Device Structure Optimization
title_full_unstemmed	Study On IN0.53GA0.47AS MOS Devices with Plasma-Ph3/N2 Treatment and Device Structure Optimization
title_sort	study on in0.53ga0.47as mos devices with plasma-ph3/n2 treatment and device structure optimization
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/77712
_version_	1681088510099980288

Study On IN0.53GA0.47AS MOS Devices with Plasma-Ph3/N2 Treatment and Device Structure Optimization

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