A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's

10.1109/55.748912

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Main Authors: Ang, D.S., Ling, C.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/80278
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-802782023-10-27T07:14:54Z A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's Ang, D.S. Ling, C.H. ELECTRICAL ENGINEERING BACHELOR OF TECHNOLOGY PROGRAMME Electron traps Hot-carrier degradation MOSFET's Post-stress interface trap generation 10.1109/55.748912 IEEE Electron Device Letters 20 3 135-137 EDLED 2014-10-07T02:55:45Z 2014-10-07T02:55:45Z 1999-03 Article Ang, D.S., Ling, C.H. (1999-03). A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's. IEEE Electron Device Letters 20 (3) : 135-137. ScholarBank@NUS Repository. https://doi.org/10.1109/55.748912 07413106 http://scholarbank.nus.edu.sg/handle/10635/80278 000078910800010 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Electron traps
Hot-carrier degradation
MOSFET's
Post-stress interface trap generation
spellingShingle Electron traps
Hot-carrier degradation
MOSFET's
Post-stress interface trap generation
Ang, D.S.
Ling, C.H.
A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's
description 10.1109/55.748912
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Ang, D.S.
Ling, C.H.
format Article
author Ang, D.S.
Ling, C.H.
author_sort Ang, D.S.
title A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's
title_short A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's
title_full A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's
title_fullStr A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's
title_full_unstemmed A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's
title_sort new model for the post-stress interface trap generation in hot-carrier stressed p-mosfet's
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80278
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