A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's
10.1109/55.748912
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sg-nus-scholar.10635-802782023-10-27T07:14:54Z A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's Ang, D.S. Ling, C.H. ELECTRICAL ENGINEERING BACHELOR OF TECHNOLOGY PROGRAMME Electron traps Hot-carrier degradation MOSFET's Post-stress interface trap generation 10.1109/55.748912 IEEE Electron Device Letters 20 3 135-137 EDLED 2014-10-07T02:55:45Z 2014-10-07T02:55:45Z 1999-03 Article Ang, D.S., Ling, C.H. (1999-03). A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's. IEEE Electron Device Letters 20 (3) : 135-137. ScholarBank@NUS Repository. https://doi.org/10.1109/55.748912 07413106 http://scholarbank.nus.edu.sg/handle/10635/80278 000078910800010 Scopus |
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Electron traps Hot-carrier degradation MOSFET's Post-stress interface trap generation |
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Electron traps Hot-carrier degradation MOSFET's Post-stress interface trap generation Ang, D.S. Ling, C.H. A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's |
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10.1109/55.748912 |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Ang, D.S. Ling, C.H. |
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Article |
author |
Ang, D.S. Ling, C.H. |
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Ang, D.S. |
title |
A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's |
title_short |
A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's |
title_full |
A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's |
title_fullStr |
A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's |
title_full_unstemmed |
A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's |
title_sort |
new model for the post-stress interface trap generation in hot-carrier stressed p-mosfet's |
publishDate |
2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/80278 |
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1781783895429087232 |