A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's

A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's

10.1109/16.853038

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Bibliographic Details
Main Authors: Guan, H., Li, M.-F., He, Y., Cho, B.J., Dong, Z.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Direct tunneling
MOS devices
Oxide breakdown
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80283
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Institution: National University of Singapore
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Summary:10.1109/16.853038

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