A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's

10.1109/16.853038

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Bibliographic Details
Main Authors:	Guan, H., Li, M.-F., He, Y., Cho, B.J., Dong, Z.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	Direct tunneling MOS devices Oxide breakdown
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80283
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-80283
record_format	dspace
spelling	sg-nus-scholar.10635-802832024-11-14T01:24:54Z A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's Guan, H. Li, M.-F. He, Y. Cho, B.J. Dong, Z. ELECTRICAL ENGINEERING Direct tunneling MOS devices Oxide breakdown 10.1109/16.853038 IEEE Transactions on Electron Devices 47 8 1608-1616 IETDA 2014-10-07T02:55:49Z 2014-10-07T02:55:49Z 2000-08 Article Guan, H.,Li, M.-F.,He, Y.,Cho, B.J.,Dong, Z. (2000-08). A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's. IEEE Transactions on Electron Devices 47 (8) : 1608-1616. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/16.853038" target="_blank">https://doi.org/10.1109/16.853038</a> 00189383 http://scholarbank.nus.edu.sg/handle/10635/80283 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Direct tunneling MOS devices Oxide breakdown
spellingShingle	Direct tunneling MOS devices Oxide breakdown Guan, H. Li, M.-F. He, Y. Cho, B.J. Dong, Z. A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's
description	10.1109/16.853038
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Guan, H. Li, M.-F. He, Y. Cho, B.J. Dong, Z.
format	Article
author	Guan, H. Li, M.-F. He, Y. Cho, B.J. Dong, Z.
author_sort	Guan, H.
title	A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's
title_short	A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's
title_full	A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's
title_fullStr	A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's
title_full_unstemmed	A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's
title_sort	thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate cmosfet's
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80283
_version_	1821200872905900032

A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's

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