A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's
10.1109/16.853038
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| التنسيق: | مقال |
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2014
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| الوصول للمادة أونلاين: | http://scholarbank.nus.edu.sg/handle/10635/80283 |
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| المؤسسة: | National University of Singapore |
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sg-nus-scholar.10635-802832024-11-14T01:24:54Z A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's Guan, H. Li, M.-F. He, Y. Cho, B.J. Dong, Z. ELECTRICAL ENGINEERING Direct tunneling MOS devices Oxide breakdown 10.1109/16.853038 IEEE Transactions on Electron Devices 47 8 1608-1616 IETDA 2014-10-07T02:55:49Z 2014-10-07T02:55:49Z 2000-08 Article Guan, H.,Li, M.-F.,He, Y.,Cho, B.J.,Dong, Z. (2000-08). A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's. IEEE Transactions on Electron Devices 47 (8) : 1608-1616. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/16.853038" target="_blank">https://doi.org/10.1109/16.853038</a> 00189383 http://scholarbank.nus.edu.sg/handle/10635/80283 NOT_IN_WOS Scopus |
| institution |
National University of Singapore |
| building |
NUS Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NUS Library |
| collection |
ScholarBank@NUS |
| topic |
Direct tunneling MOS devices Oxide breakdown |
| spellingShingle |
Direct tunneling MOS devices Oxide breakdown Guan, H. Li, M.-F. He, Y. Cho, B.J. Dong, Z. A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's |
| description |
10.1109/16.853038 |
| author2 |
ELECTRICAL ENGINEERING |
| author_facet |
ELECTRICAL ENGINEERING Guan, H. Li, M.-F. He, Y. Cho, B.J. Dong, Z. |
| format |
Article |
| author |
Guan, H. Li, M.-F. He, Y. Cho, B.J. Dong, Z. |
| author_sort |
Guan, H. |
| title |
A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's |
| title_short |
A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's |
| title_full |
A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's |
| title_fullStr |
A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's |
| title_full_unstemmed |
A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's |
| title_sort |
thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate cmosfet's |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/80283 |
| _version_ |
1821200872905900032 |