A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's

• Main Authors: Guan, H., Li, M.-F., He, Y., Cho, B.J., Dong, Z.
• 其他作者: ELECTRICAL ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Direct tunneling; MOS devices; Oxide breakdown
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/80283

10.1109/16.853038