A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFET's

A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFET's

10.1109/16.658824

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Bibliographic Details
Main Authors: Ang, D.S., Ling, C.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80284
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Institution: National University of Singapore
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Summary:10.1109/16.658824

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