Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications

Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers

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Bibliographic Details
Main Authors: Lau, Wai Shing, Tan, Thiam Siew, Sandler, Nathan P., Page, Barry S.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80319
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/80319

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