Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications

Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers

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Main Authors: Lau, Wai Shing, Tan, Thiam Siew, Sandler, Nathan P., Page, Barry S.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80319
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-803192015-01-08T00:35:47Z Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications Lau, Wai Shing Tan, Thiam Siew Sandler, Nathan P. Page, Barry S. ELECTRICAL ENGINEERING Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers 34 2 B 757-761 JAPND 2014-10-07T02:56:13Z 2014-10-07T02:56:13Z 1995-02 Article Lau, Wai Shing,Tan, Thiam Siew,Sandler, Nathan P.,Page, Barry S. (1995-02). Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers 34 (2 B) : 757-761. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/80319 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Lau, Wai Shing
Tan, Thiam Siew
Sandler, Nathan P.
Page, Barry S.
format Article
author Lau, Wai Shing
Tan, Thiam Siew
Sandler, Nathan P.
Page, Barry S.
spellingShingle Lau, Wai Shing
Tan, Thiam Siew
Sandler, Nathan P.
Page, Barry S.
Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications
author_sort Lau, Wai Shing
title Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications
title_short Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications
title_full Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications
title_fullStr Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications
title_full_unstemmed Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications
title_sort characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (dram) applications
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80319
_version_ 1681088865461338112

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