Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80319 |
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| Institution: | National University of Singapore |