Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET's

Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET's

10.1109/16.644662

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Bibliographic Details
Main Author: Ling, C.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80326
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Institution: National University of Singapore
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Summary:10.1109/16.644662

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