Determination of substrate doping, substrate carrier lifetime and density of surface recombination centres of MOSFETs by gate-controlled-diode measurements

Determination of substrate doping, substrate carrier lifetime and density of surface recombination centres of MOSFETs by gate-controlled-diode measurements

10.1088/0268-1242/11/5/005

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Bibliographic Details
Main Authors: Chen, T.P., Chan, D.S.H., Chim, W.K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80358
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Institution: National University of Singapore
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Summary:10.1088/0268-1242/11/5/005

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