Effects of hydrostatic pressure on Raman scattering in Ge quantum dots
Physical Review B - Condensed Matter and Materials Physics
Saved in:
Main Authors: | Teo, K.L., Qin, L., Noordin, I.M., Karunasiri, G., Shen, Z.X., Schmidt, O.G., Eberl, K., Queisser, H.J. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80375 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Raman scattering of Ge/Si dot superlattices under hydrostatic pressure
by: Qin, L., et al.
Published: (2014) -
Raman scattering studies of Ge/Si islands under hydrostatic pressure
by: Teo, K.L., et al.
Published: (2014) -
Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices
by: Qin, L., et al.
Published: (2014) -
Raman scattering studies in two kinds of Ge nanosystems under hydrostatic pressure
by: Teo, K.L., et al.
Published: (2014) -
Pressure-induced resonant Raman scattering in Ge/Si islands
by: Teo, K.L., et al.
Published: (2014)