Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses

Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses

10.1088/0268-1242/11/10/005

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Bibliographic Details
Main Authors: Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80545
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Institution: National University of Singapore
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Summary:10.1088/0268-1242/11/10/005

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