Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses

Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses

10.1088/0268-1242/11/10/005

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書目詳細資料
Main Authors:	Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y.
其他作者:	ELECTRICAL ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/80545
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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