Reduction of carrier depletion in p+ polysilicon gates using laser thermal processing

Reduction of carrier depletion in p+ polysilicon gates using laser thermal processing

10.1109/LED.2003.812578

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Bibliographic Details
Main Authors: Chong, Y.F., Gossmann, H.-J.L., Thompson, M.O., Pey, K.L., Wee, A.T.S., Talwar, S., Chan, L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Boron penetration
Laser thermal processing
Poly-depletion
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82970
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82970

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