Laser thermal processing of amorphous silicon gates to reduce poly-depletion in CMOS devices

Laser thermal processing of amorphous silicon gates to reduce poly-depletion in CMOS devices

10.1109/TED.2004.826866

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Bibliographic Details
Main Authors: Chong, Y.F., Gossmann, H.-J.L., Pey, K.-L., Thompson, M.O., Wee, A.T.S., Tung, C.H.
Other Authors: PHYSICS
Format: Article
Published: 2014
Subjects:
Boron penetration
Gate oxide reliability
Laser thermal processing (LTP)
Poly-depletion
Online Access:http://scholarbank.nus.edu.sg/handle/10635/97046
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/97046

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