Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses

10.1088/0268-1242/11/10/005

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Main Authors: Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y.
其他作者: ELECTRICAL ENGINEERING
格式: Article
出版: 2014
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/80545
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spelling sg-nus-scholar.10635-805452024-11-14T10:20:21Z Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses Lou, C.L. Chim, W.K. Chan, D.S.H. Pan, Y. ELECTRICAL ENGINEERING 10.1088/0268-1242/11/10/005 Semiconductor Science and Technology 11 10 1381-1387 SSTEE 2014-10-07T02:58:42Z 2014-10-07T02:58:42Z 1996-10 Article Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y. (1996-10). Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses. Semiconductor Science and Technology 11 (10) : 1381-1387. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/11/10/005 02681242 http://scholarbank.nus.edu.sg/handle/10635/80545 A1996VU74700002 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1088/0268-1242/11/10/005
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Lou, C.L.
Chim, W.K.
Chan, D.S.H.
Pan, Y.
format Article
author Lou, C.L.
Chim, W.K.
Chan, D.S.H.
Pan, Y.
spellingShingle Lou, C.L.
Chim, W.K.
Chan, D.S.H.
Pan, Y.
Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses
author_sort Lou, C.L.
title Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses
title_short Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses
title_full Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses
title_fullStr Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses
title_full_unstemmed Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stresses
title_sort hot-carrier induced degradation of polysilicon and tungsten polycide gate mosfets under maximum substrate and gate current stresses
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80545
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