Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements

10.1088/0268-1242/13/9/003

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Main Authors:	Chan, D.S.H., Leang, S.E., Chim, W.K.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80638
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-80638
record_format	dspace
spelling	sg-nus-scholar.10635-806382023-10-29T20:58:47Z Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements Chan, D.S.H. Leang, S.E. Chim, W.K. ELECTRICAL ENGINEERING 10.1088/0268-1242/13/9/003 Semiconductor Science and Technology 13 9 976-980 SSTEE 2014-10-07T02:59:42Z 2014-10-07T02:59:42Z 1998-09 Article Chan, D.S.H., Leang, S.E., Chim, W.K. (1998-09). Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements. Semiconductor Science and Technology 13 (9) : 976-980. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/13/9/003 02681242 http://scholarbank.nus.edu.sg/handle/10635/80638 000075965600003 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1088/0268-1242/13/9/003
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Chan, D.S.H. Leang, S.E. Chim, W.K.
format	Article
author	Chan, D.S.H. Leang, S.E. Chim, W.K.
spellingShingle	Chan, D.S.H. Leang, S.E. Chim, W.K. Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
author_sort	Chan, D.S.H.
title	Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
title_short	Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
title_full	Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
title_fullStr	Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
title_full_unstemmed	Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
title_sort	investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre mosfets using a new charge-profiling technique based on charge-pumping measurements
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80638
_version_	1781783930231324672

Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements

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