Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
10.1088/0268-1242/13/9/003
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80638 |
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| Institution: | National University of Singapore |