Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon lines

Materials Research Society Symposium - Proceedings

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Main Authors: Chua, H.N., Pey, K.L., Siah, S.Y., Lim, E.H., Ho, C.S.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80680
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-806802015-02-24T20:57:25Z Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon lines Chua, H.N. Pey, K.L. Siah, S.Y. Lim, E.H. Ho, C.S. ELECTRICAL ENGINEERING Materials Research Society Symposium - Proceedings 564 91-99 MRSPD 2014-10-07T03:00:09Z 2014-10-07T03:00:09Z 1999 Article Chua, H.N.,Pey, K.L.,Siah, S.Y.,Lim, E.H.,Ho, C.S. (1999). Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon lines. Materials Research Society Symposium - Proceedings 564 : 91-99. ScholarBank@NUS Repository. 02729172 http://scholarbank.nus.edu.sg/handle/10635/80680 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description Materials Research Society Symposium - Proceedings
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Chua, H.N.
Pey, K.L.
Siah, S.Y.
Lim, E.H.
Ho, C.S.
format Article
author Chua, H.N.
Pey, K.L.
Siah, S.Y.
Lim, E.H.
Ho, C.S.
spellingShingle Chua, H.N.
Pey, K.L.
Siah, S.Y.
Lim, E.H.
Ho, C.S.
Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon lines
author_sort Chua, H.N.
title Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon lines
title_short Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon lines
title_full Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon lines
title_fullStr Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon lines
title_full_unstemmed Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon lines
title_sort line-width dependence of void formation in ti-salicided bf 2-doped polysilicon lines
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80680
_version_ 1681088932718051328