Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon lines

Materials Research Society Symposium - Proceedings

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Bibliographic Details
Main Authors: Chua, H.N., Pey, K.L., Siah, S.Y., Lim, E.H., Ho, C.S.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80680
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Institution: National University of Singapore
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