Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

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Main Authors:	Hou, Y.T., Li, M.F., Lai, W.H., Jin, Y.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80733
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-807332023-10-31T09:13:05Z Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors Hou, Y.T. Li, M.F. Lai, W.H. Jin, Y. ELECTRICAL ENGINEERING ELECTRICAL & COMPUTER ENGINEERING Applied Physics Letters 78 25 4034-4036 APPLA 2014-10-07T03:00:43Z 2014-10-07T03:00:43Z 2001-06-18 Article Hou, Y.T., Li, M.F., Lai, W.H., Jin, Y. (2001-06-18). Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors. Applied Physics Letters 78 (25) : 4034-4036. ScholarBank@NUS Repository. 00036951 http://scholarbank.nus.edu.sg/handle/10635/80733 000169339800037 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	Applied Physics Letters
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Hou, Y.T. Li, M.F. Lai, W.H. Jin, Y.
format	Article
author	Hou, Y.T. Li, M.F. Lai, W.H. Jin, Y.
spellingShingle	Hou, Y.T. Li, M.F. Lai, W.H. Jin, Y. Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
author_sort	Hou, Y.T.
title	Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
title_short	Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
title_full	Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
title_fullStr	Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
title_full_unstemmed	Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
title_sort	modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80733
_version_	1781783936064552960

Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors

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