Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors

Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

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Bibliographic Details
Main Authors:	Hou, Y.T., Li, M.F., Lai, W.H., Jin, Y.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80733
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Institution:	National University of Singapore

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