Polarisation dependence of field-induced refractive index variation in strained and unstrained quantum well structures
Electronics Letters
Saved in:
Main Authors: | Chong, T.C., Wan, H.W., Chua, S.J. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80993 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Polarisation dependence of field-induced refractive index variation in strained and unstrained quantum well structures
by: Chong, T.C., et al.
Published: (2014) -
Polarization-insensitive electroabsorption in strained GaInAs/AlInAs quantum well structures
by: Wan, H.W., et al.
Published: (2014) -
Polarization-insensitive electroabsorption in strained GaInAs/AlInAs quantum well structures
by: Wan, H.W., et al.
Published: (2014) -
Near-IR photon emission spectroscopy on strained and unstrained 60 nm silicon nMOSFETs
by: Tan, S.L., et al.
Published: (2014) -
Considerations for polarization insensitive optical switching and modulation using strained InGaAs/InAlAs quantum well structure
by: Wan, H.W., et al.
Published: (2014)