Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current

Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current

10.1063/1.358994

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Bibliographic Details
Main Authors: Lau, W.S., Chan, D.S.H., Phang, J.C.H., Chow, K.W., Pey, K.S., Lim, Y.P., Sane, V., Cronquist, B.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81032
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81032

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