SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.

SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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Bibliographic Details
Main Authors: Ling, C.H., Kwok, C.Y., Prasad, K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81161
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Institution: National University of Singapore
Description
Summary:Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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