SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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Main Authors: Ling, C.H., Kwok, C.Y., Prasad, K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81161
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-811612015-01-07T08:24:24Z SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES. Ling, C.H. Kwok, C.Y. Prasad, K. ELECTRICAL ENGINEERING Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 25 10 1490-1494 JAPND 2014-10-07T03:05:19Z 2014-10-07T03:05:19Z 1986-10 Article Ling, C.H.,Kwok, C.Y.,Prasad, K. (1986-10). SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 25 (10) : 1490-1494. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/81161 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Ling, C.H.
Kwok, C.Y.
Prasad, K.
format Article
author Ling, C.H.
Kwok, C.Y.
Prasad, K.
spellingShingle Ling, C.H.
Kwok, C.Y.
Prasad, K.
SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
author_sort Ling, C.H.
title SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
title_short SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
title_full SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
title_fullStr SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
title_full_unstemmed SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
title_sort silicon nitride films prepared by plasma-enhanced chemical vapour deposition (pecvd) of sih//4/nh//3/n//2 mixtures: some physical properties.
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/81161
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