The effects of polysilicon dopant depletion and Fowler-Nordheim tunnelling on the characteristics of N+ polysilicon-oxide-silicon capacitors

10.1088/0268-1242/12/3/003

Saved in:
Bibliographic Details
Main Authors: Ling, C.H., Ang, D.S., Ooi, J.A.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81250
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
id sg-nus-scholar.10635-81250
record_format dspace
spelling sg-nus-scholar.10635-812502023-10-29T23:17:14Z The effects of polysilicon dopant depletion and Fowler-Nordheim tunnelling on the characteristics of N+ polysilicon-oxide-silicon capacitors Ling, C.H. Ang, D.S. Ooi, J.A. ELECTRICAL ENGINEERING BACHELOR OF TECHNOLOGY PROGRAMME 10.1088/0268-1242/12/3/003 Semiconductor Science and Technology 12 3 245-251 SSTEE 2014-10-07T03:06:18Z 2014-10-07T03:06:18Z 1997-03 Article Ling, C.H., Ang, D.S., Ooi, J.A. (1997-03). The effects of polysilicon dopant depletion and Fowler-Nordheim tunnelling on the characteristics of N+ polysilicon-oxide-silicon capacitors. Semiconductor Science and Technology 12 (3) : 245-251. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/12/3/003 02681242 http://scholarbank.nus.edu.sg/handle/10635/81250 A1997WM02500001 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1088/0268-1242/12/3/003
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Ling, C.H.
Ang, D.S.
Ooi, J.A.
format Article
author Ling, C.H.
Ang, D.S.
Ooi, J.A.
spellingShingle Ling, C.H.
Ang, D.S.
Ooi, J.A.
The effects of polysilicon dopant depletion and Fowler-Nordheim tunnelling on the characteristics of N+ polysilicon-oxide-silicon capacitors
author_sort Ling, C.H.
title The effects of polysilicon dopant depletion and Fowler-Nordheim tunnelling on the characteristics of N+ polysilicon-oxide-silicon capacitors
title_short The effects of polysilicon dopant depletion and Fowler-Nordheim tunnelling on the characteristics of N+ polysilicon-oxide-silicon capacitors
title_full The effects of polysilicon dopant depletion and Fowler-Nordheim tunnelling on the characteristics of N+ polysilicon-oxide-silicon capacitors
title_fullStr The effects of polysilicon dopant depletion and Fowler-Nordheim tunnelling on the characteristics of N+ polysilicon-oxide-silicon capacitors
title_full_unstemmed The effects of polysilicon dopant depletion and Fowler-Nordheim tunnelling on the characteristics of N+ polysilicon-oxide-silicon capacitors
title_sort effects of polysilicon dopant depletion and fowler-nordheim tunnelling on the characteristics of n+ polysilicon-oxide-silicon capacitors
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/81250
_version_ 1781783979313070080