Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurement

IEEE International Conference on Conduction & Breakdown in Solid Dielectrics

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Main Authors: Cha, C.L., Chor, E.F., Gong, H., Teo, T.H., Zhang, A.Q., Chan, L.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81378
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-813782015-01-08T23:28:51Z Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurement Cha, C.L. Chor, E.F. Gong, H. Teo, T.H. Zhang, A.Q. Chan, L. ELECTRICAL ENGINEERING MATERIALS SCIENCE IEEE International Conference on Conduction & Breakdown in Solid Dielectrics 253-256 PICBF 2014-10-07T03:07:40Z 2014-10-07T03:07:40Z 1998 Conference Paper Cha, C.L.,Chor, E.F.,Gong, H.,Teo, T.H.,Zhang, A.Q.,Chan, L. (1998). Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurement. IEEE International Conference on Conduction & Breakdown in Solid Dielectrics : 253-256. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/81378 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description IEEE International Conference on Conduction & Breakdown in Solid Dielectrics
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Cha, C.L.
Chor, E.F.
Gong, H.
Teo, T.H.
Zhang, A.Q.
Chan, L.
format Conference or Workshop Item
author Cha, C.L.
Chor, E.F.
Gong, H.
Teo, T.H.
Zhang, A.Q.
Chan, L.
spellingShingle Cha, C.L.
Chor, E.F.
Gong, H.
Teo, T.H.
Zhang, A.Q.
Chan, L.
Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurement
author_sort Cha, C.L.
title Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurement
title_short Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurement
title_full Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurement
title_fullStr Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurement
title_full_unstemmed Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurement
title_sort application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurement
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/81378
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