Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurement

Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurement

IEEE International Conference on Conduction & Breakdown in Solid Dielectrics

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Bibliographic Details
Main Authors: Cha, C.L., Chor, E.F., Gong, H., Teo, T.H., Zhang, A.Q., Chan, L.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81378
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81378

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