Effects of constant current-stressing on reoxidized nitrided oxide (ONO) in flash memory devices

• Main Authors: Cha, C.L., Chor, E.F., Gong, H., Zhang, A.Q., Chan, L., Xie, J.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81405
• Institution: National University of Singapore

International Symposium on IC Technology, Systems and Applications