Germanium MOS: An Evaluation from Carrier Quantization and Tunneling Current

• Main Authors: Low, T., Hou, Y.T., Li, M.F., Zhu, C., Kwong, D.-L., Chin, A.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81442
• Institution: National University of Singapore

Digest of Technical Papers - Symposium on VLSI Technology