Impact of voids in Ti-salicided p+ polysilicon lines on TiSi2 electrical properties

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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Bibliographic Details
Main Authors: Chua, H.N., Pey, K.L., Siah, S.Y., Ong, L.Y., Lim, E.H., Gan, C.L., See, K.H., Ho, C.S.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81467
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Institution: National University of Singapore
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Summary:Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA