Impact of voids in Ti-salicided p+ polysilicon lines on TiSi2 electrical properties

• Main Authors: Chua, H.N., Pey, K.L., Siah, S.Y., Ong, L.Y., Lim, E.H., Gan, C.L., See, K.H., Ho, C.S.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81467
• Institution: National University of Singapore

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA