Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates

• Main Authors: Feng, Z.C., Yang, T.R., Hou, Y.T.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: GaN; Infrared reflectance; Non-destructive; Sapphire; Silicon
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81486
• Institution: National University of Singapore

Materials Science in Semiconductor Processing