Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates

Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates

Materials Science in Semiconductor Processing

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Bibliographic Details
Main Authors: Feng, Z.C., Yang, T.R., Hou, Y.T.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
GaN
Infrared reflectance
Non-destructive
Sapphire
Silicon
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81486
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Institution: National University of Singapore

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