Investigation of Performance Limits of Germanium Double-Gated MOSFETs

Investigation of Performance Limits of Germanium Double-Gated MOSFETs

Technical Digest - International Electron Devices Meeting

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Bibliographic Details
Main Authors: Low, T., Hou, Y.T., Li, M.F., Zhu, C., Chin, A., Samudra, G., Chan, L., Kwong, D.-L.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81497
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Institution: National University of Singapore
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Summary:Technical Digest - International Electron Devices Meeting

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