New mechanism of leakage current in ultra-shallow junctions with TiSi2 contacts

New mechanism of leakage current in ultra-shallow junctions with TiSi2 contacts

Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA

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Bibliographic Details
Main Authors: Lau, Wai Shing, Qian, Peng Wei, Zhao, Rong
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81589
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Institution: National University of Singapore
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Summary:Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA

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