New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications

IECON Proceedings (Industrial Electronics Conference)

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Bibliographic Details
Main Authors:	Liang, Y.C., Xu, S., Ren, C., Foo, P.-D.
Other Authors:	INSTITUTE OF MICROELECTRONICS
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81594
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Institution:	National University of Singapore

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Summary:	IECON Proceedings (Industrial Electronics Conference)

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