New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications

• Main Authors: Liang, Y.C., Xu, S., Ren, C., Foo, P.-D.
• Other Authors: INSTITUTE OF MICROELECTRONICS
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81594
• Institution: National University of Singapore

IECON Proceedings (Industrial Electronics Conference)