New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications

IECON Proceedings (Industrial Electronics Conference)

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Bibliographic Details
Main Authors:	Liang, Y.C., Xu, S., Ren, C., Foo, P.-D.
Other Authors:	INSTITUTE OF MICROELECTRONICS
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81594
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81594
record_format	dspace
spelling	sg-nus-scholar.10635-815942015-01-09T16:00:49Z New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications Liang, Y.C. Xu, S. Ren, C. Foo, P.-D. INSTITUTE OF MICROELECTRONICS ELECTRICAL ENGINEERING IECON Proceedings (Industrial Electronics Conference) 2 1001-1006 IEPRE 2014-10-07T03:09:57Z 2014-10-07T03:09:57Z 2000 Conference Paper Liang, Y.C.,Xu, S.,Ren, C.,Foo, P.-D. (2000). New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications. IECON Proceedings (Industrial Electronics Conference) 2 : 1001-1006. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/81594 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	IECON Proceedings (Industrial Electronics Conference)
author2	INSTITUTE OF MICROELECTRONICS
author_facet	INSTITUTE OF MICROELECTRONICS Liang, Y.C. Xu, S. Ren, C. Foo, P.-D.
format	Conference or Workshop Item
author	Liang, Y.C. Xu, S. Ren, C. Foo, P.-D.
spellingShingle	Liang, Y.C. Xu, S. Ren, C. Foo, P.-D. New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications
author_sort	Liang, Y.C.
title	New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications
title_short	New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications
title_full	New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications
title_fullStr	New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications
title_full_unstemmed	New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications
title_sort	new partial soi ldmos device with high power-added efficiency for 2 ghz rf power amplifier applications
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81594
_version_	1681089099675467776

New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications

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