Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

International Integrated Reliability Workshop Final Report

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Main Authors:	Guan, Hao, Li, M.F., Zhang, Yaohui, Cho, B.J., Jie, B.B., Xie, Joseph, Wang, J.L.F., Yen, Andrew C., Sheng, George T.T., Dong, Zhong, Li, Weidan
Other Authors:	ELECTRICAL ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81682
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81682
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spelling	sg-nus-scholar.10635-816822015-01-08T16:22:21Z Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique Guan, Hao Li, M.F. Zhang, Yaohui Cho, B.J. Jie, B.B. Xie, Joseph Wang, J.L.F. Yen, Andrew C. Sheng, George T.T. Dong, Zhong Li, Weidan ELECTRICAL ENGINEERING INSTITUTE OF MICROELECTRONICS International Integrated Reliability Workshop Final Report 20-23 85RQA 2014-10-07T03:10:53Z 2014-10-07T03:10:53Z 1999 Conference Paper Guan, Hao,Li, M.F.,Zhang, Yaohui,Cho, B.J.,Jie, B.B.,Xie, Joseph,Wang, J.L.F.,Yen, Andrew C.,Sheng, George T.T.,Dong, Zhong,Li, Weidan (1999). Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique. International Integrated Reliability Workshop Final Report : 20-23. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/81682 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	International Integrated Reliability Workshop Final Report
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Guan, Hao Li, M.F. Zhang, Yaohui Cho, B.J. Jie, B.B. Xie, Joseph Wang, J.L.F. Yen, Andrew C. Sheng, George T.T. Dong, Zhong Li, Weidan
format	Conference or Workshop Item
author	Guan, Hao Li, M.F. Zhang, Yaohui Cho, B.J. Jie, B.B. Xie, Joseph Wang, J.L.F. Yen, Andrew C. Sheng, George T.T. Dong, Zhong Li, Weidan
spellingShingle	Guan, Hao Li, M.F. Zhang, Yaohui Cho, B.J. Jie, B.B. Xie, Joseph Wang, J.L.F. Yen, Andrew C. Sheng, George T.T. Dong, Zhong Li, Weidan Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique
author_sort	Guan, Hao
title	Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique
title_short	Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique
title_full	Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique
title_fullStr	Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique
title_full_unstemmed	Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique
title_sort	predicting plasma charging damage in ultra thin gate oxide by using nondestructive dciv technique
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81682
_version_	1681089115702951936

Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

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