Roles of primary hot hole and FN electron fluences in gate oxide breakdown

Roles of primary hot hole and FN electron fluences in gate oxide breakdown

Materials Research Society Symposium - Proceedings

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Bibliographic Details
Main Authors: Li, M.F., He, Y.D., Ma, S.G., Cho, B.J., Lo, K.F.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81720
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/81720

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